highkmetalgateworkfunction

Developing a systematic approach to metal gates and high-k dielectrics in future-generation CMOS ... Sematech researchers present a terraced-oxide method for ...

2007年12月24日 — ... metal gate)議程的會場上，Intel和IBM ... high-k/metal gate材料技術。 ... 利用此一製程改變High-k膜的組成，促使gate的work function產生變化。

由 T Kawanago 著作 · 被引用 5 次 — The studies described in this thesis were investigated to realize high performance Si MOSFETs with high-k/metal gate stacks. Prospective problems were analyzed ...

由 J Robertson 著作 · 2015 · 被引用 734 次 — Work function requirements of metal gates. The purpose of the gate electrode in CMOS is to shift the surface Fermi level EF of the channel to the other band ...

由 J Zhou 著作 · 2018 · 被引用 1 次 — Effective work function is the one of main parameters to determine threshold voltage in high-k metal gate (HKMG) metal-oxide-semiconductor field-effect ...

由 S Ramesh 著作 · 2021 · 被引用 2 次 — The high-k liner helps to lower the injecting field for the electrons at the gate, and even proves to have a larger impact than the metal work ...

由 J Robertson 著作 · 2009 · 被引用 5 次 — Work Function Control on High K Metal Gate Stacks. John Robertsona a Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK. The paper summarizes ...

由 E Erben 著作 · 2018 · 被引用 8 次 — The metal gate for NMOS transistors requires a work function close to the conduction band of Si (∼4.1 eV) and the PMOS transistor needs a metal gate with a ...

由 YW Chen 著作 · 2012 — To sustain CMOS transistor continuously scaling, high-k and metal gate technology has become the foundation of logic CMOS technology. Because of the direct ...